Ujjwal K. Das
Ujjwal K. Das received a Ph.D. degree in Physics from the Indian Association for the Cultivation of Science, Calcutta, India, where he studied on the structural properties of amorphous (a-Si:H) and microcrystalline Si (μc-Si:H) films. He developed the a-Si:H based solar cells using Ar dilution. He set up the facilities for plasma diagnostics by optical emission spectroscopy during his Ph.D. tenure.
After his completion of Ph.D., he served as a Research Scientist in Joint Research Center for Atom Technology, Tsukuba, Japan, for two years. During his stay in Japan, he studied the basic growth mechanism of a-Si:H films and the effect of H plasma treatment on the deposited films using real time monitoring of dangling bond defect formation using electron spin resonance.
In the year 2000, Dr. Das moved to the USA and worked as a R&D Scientist at MVSystems Inc., an equipment manufacturer specializing in thin film deposition system including RF plasma enhanced CVD, hot-wire CVD and other thin film deposition systems.
He joined Institute of Energy Conversion, University of Delaware in 2004 and initiated research effort on super passivation of crystalline silicon surface and silicon heterojunction solar cells using low temperature deposited amorphous silicon thin layers. He has authored more than 50 papers and has more than 15 years experience in the field of a-Si:Η, μc-Si:H films and the solar cells based on these materials.
Dr. Das also serves as a technical reviewer of number of scientific journals and conference proceedings.