Presented at the 26th IEEE PVSC Conference Sept. 30 - Oct. 3, 1997 Aneheim, CA, USA
J. E. Phillips, J. Titus and D. Hofmann
Institute of Energy Conversion
University of Delaware
Newark, DE 19716-3820 USA
jep@udel.edu
ABSTRACT
As the bandgap of CuInSe2 is increased by alloying with Ga or S, the loss in efficiency
due to the decrease of light generated current with increasing
voltage becomes important. The standard technique of quantifying
this loss is to analyze spectral response measurements made as
a function of applied voltage. Instead, it is shown how to determine
the voltage dependence of the light generated current by an analysis
of the current-voltage (I-V) measurements made at two different
light intensities. By adding an I-V measurement at a third light
intensity one can also determine if the analysis technique is
valid.