Equipment at IEC

Thin Film Deposition Capabilities

• Roll-to-Roll inline deposition system with four elemental effusion sources and in-situ flux control for depositing Cu(InGa)Se2 thin films onto a 15 cm wide moving web.
• Four-source elemental evaporator for depositing Cu(InGa)Se2 onto an array of nine 2.5x2.5 cm substrates.
• Four source elemental evaporator for depositing Cu(InAl)Se2 onto an array of nine 2.5x2.5 cm substrates.
• Five source elemental evaporator for depositing Cu(InGa)(Se,S)2 onto an array of nine 2.5x2.5 cm substrates.
• Vacuum evaporator configured for reacting Cu/In/Ga or other layers using Se and/or S evaporation sources.
• CVD reactor for reacting Cu/In/Ga or other layers with H2Se and/or H2S gas.
• Vapor transport deposition system for depositing II-VI compounds onto moving 10x10 cm substrates in inert or reactive ambient over wide range of pressure and temperature.
• Three-source evaporator for depositing CdS, ZnS, and alloys thereof with In doping.
• Three-source evaporator for depositing CdTe, ZnTe, CdHgTe with dopant elements.
• Hot wire chemical vapor deposition for depositing a-Si:H and polycrystalline Si thin films and devices.
• Plasma enhanced chemical vapor deposition for depositing a-Si:H and a-SiGe:H films and devices.
• Six chamber, in-line, plasma enhanced chemical vapor deposition for depositing a-Si:H and a-SiGe:H films and devices.
• Reactor for treating films in Te vapor.
• Reactor for treating films in halide vapors.
• Chemical bath deposition of uniform CdS films from 10 to 100nm thick.
• Electron beam evaporator with three independently controlled sources for simultaneous or single element deposition of metals.
• Electron beam evaporator with rotatable 4-source turret for depositing most metals and anti-reflection coatings.
• Electron beam evaporator with rotatable 4-source turret and two sputtering sources.
• Three target RF/DC sputtering system for deposition of Mo, ZnO, and ITO.
• Four target DC magnetron sputtering system for deposition of Cu, In, Ga, Mo, and other metals.
• Kurt Lesker six target RF/DC sputtering system with load lock chamber.
• Small sputter coater for deposition of ultra-thin metal layers.
• Crest Ultrasonic substrate cleaning and drying facility.
• Assorted tube furnaces and drying ovens for heat treatment and reaction in air, argon, nitrogen, hydrogen, oxygen, and hydrogen-argon.
• Full positive photolithography capability including spin coater, Suss Mask Aligner, and well established etching procedures.

Material Characterization Capabilities

• Amray 1810T Digital Scanning Electron Microscope (15X to 100,000X) with Energy Dispersive Spectroscopy (EDS) and Electron Beam Induced Current capabilities.
• Perkin-Elmer Lambda-9 UV-visible-IR Spectrophotometer fitted with integrating sphere.
• Philips/Norelco Scanning Wide Angle X-ray Diffractometer with diffracted beam monochromation (CuKa) and digital control/acquisition.
• Philips Scanning Wide Angle X-ray Diffractometer with diffracted beam monochromation (CuKa, CrKa, CoKa), variable slits and digital control/acquisition.
• Rigaku D/Max Scanning X-ray Diffractometer with symmetric theta-2 theta and asymmetric glancing incidence geometries, variable slits, and computer control/acquisition.
• Physical Electronics XPS system with load-lock sample preparation chamber and differentially pumped Ar ion gun for depth profiling.
• Digital Instruments Dimension 3100 Scanning Probe Microscope with capabilities including tunneling, electrostatic force, and magnetic force microscopy.
• Perkin-Elmer Atomic Absorption Spectrometer Model 2380 with lamps for Cu, In, Se, Ga, Cd, Na, K, Ca, Zn and more.
• PAR Potentiostat-Galvanostat with digital coulometer.
• Olympus Optical Microscope with reflected, transmitted, and polarized illumination. Accessories include Nomarski optics and dual axis stage with verniers.
• Gaertner Ellipsometer.
• Dektak surface profilometer.
• Light and dark conductivity as a function of illumination intensity and temperature.
• Hall effect measurement system.

Device Analysis Capabilities

• Current-voltage testing as a function of illumination intensity, spectral content, and temperature.
• Oriel Xenon solar simulator (AM1.5 global spectra).
• Spectral response with light and voltage bias capabilities.
• HP4274 LCR meter for capacitance measurements as a function of illumination intensity and temperature.
• Sinton Lifetime Tester.
• Laser scanning facility-optical beam induced current.
• Accelerated stress exposure facility, allowing up to 16 samples to be independently monitored and maintained under different states of controlled atmosphere, illumination, electrical bias and temperature.