Roll-to-Roll inline deposition system with four elemental effusion sources and in-situ flux control for depositing Cu(InGa)Se2 thin films onto a 15 cm wide moving web.
Four-source elemental evaporator for depositing Cu(InGa)Se2 onto an array of nine 2.5x2.5 cm substrates.
Four source elemental evaporator for depositing Cu(InAl)Se2 onto an array of nine 2.5x2.5 cm substrates.
Five source elemental evaporator for depositing Cu(InGa)(Se,S)2 onto an array of nine 2.5x2.5 cm substrates.
Vacuum evaporator configured for reacting Cu/In/Ga or other layers using Se and/or S evaporation sources.
CVD reactor for reacting Cu/In/Ga or other layers with H2Se and/or H2S gas.
Vapor transport deposition system for depositing II-VI compounds onto moving 10x10 cm substrates in inert or reactive ambient over wide range of pressure and temperature.
Three-source evaporator for depositing CdS, ZnS, and alloys thereof with In doping.
Three-source evaporator for depositing CdTe, ZnTe, CdHgTe with dopant elements.
Hot wire chemical vapor deposition for depositing a-Si:H and polycrystalline Si thin films and devices.
Plasma enhanced chemical vapor deposition for depositing a-Si:H and a-SiGe:H films and devices.
Six chamber, in-line, plasma enhanced chemical vapor deposition for depositing a-Si:H and a-SiGe:H films and devices.
Reactor for treating films in Te vapor.
Reactor for treating films in halide vapors.
Chemical bath deposition of uniform CdS films from 10 to 100nm thick.
Electron beam evaporator with three independently controlled sources for simultaneous or single element deposition of metals.
Electron beam evaporator with rotatable 4-source turret for depositing most metals and anti-reflection coatings.
Electron beam evaporator with rotatable 4-source turret and two sputtering sources.
Three target RF/DC sputtering system for deposition of Mo, ZnO, and ITO.
Four target DC magnetron sputtering system for deposition of Cu, In, Ga, Mo, and other metals.
Kurt Lesker six target RF/DC sputtering system with load lock chamber.
Small sputter coater for deposition of ultra-thin metal layers.
Crest Ultrasonic substrate cleaning and drying facility.
Assorted tube furnaces and drying ovens for heat treatment and reaction in air, argon, nitrogen, hydrogen, oxygen, and hydrogen-argon.
Full positive photolithography capability including spin coater, Suss Mask Aligner, and well established etching procedures.
Material Characterization Capabilities
Amray 1810T Digital Scanning Electron Microscope (15X to 100,000X) with Energy Dispersive Spectroscopy (EDS) and Electron Beam Induced Current capabilities.
Perkin-Elmer Lambda-9 UV-visible-IR Spectrophotometer fitted with integrating sphere.
Philips/Norelco Scanning Wide Angle X-ray Diffractometer with diffracted beam monochromation (CuKa) and digital control/acquisition.
Philips Scanning Wide Angle X-ray Diffractometer with diffracted beam monochromation (CuKa, CrKa, CoKa), variable slits and digital control/acquisition.
Rigaku D/Max Scanning X-ray Diffractometer with symmetric theta-2 theta and asymmetric glancing incidence geometries, variable slits, and computer control/acquisition.
Physical Electronics XPS system with load-lock sample preparation chamber and differentially pumped Ar ion gun for depth profiling.
Digital Instruments Dimension 3100 Scanning Probe Microscope with capabilities including tunneling, electrostatic force, and magnetic force microscopy.
Perkin-Elmer Atomic Absorption Spectrometer Model 2380 with lamps for Cu, In, Se, Ga, Cd, Na, K, Ca, Zn and more.
PAR Potentiostat-Galvanostat with digital coulometer.
Olympus Optical Microscope with reflected, transmitted, and polarized illumination. Accessories include Nomarski optics and dual axis stage with verniers.
Gaertner Ellipsometer.
Dektak surface profilometer.
Light and dark conductivity as a function of illumination intensity and temperature.
Hall effect measurement system.
Device Analysis Capabilities
Current-voltage testing as a function of illumination intensity, spectral content, and temperature.
Oriel Xenon solar simulator (AM1.5 global spectra).
Spectral response with light and voltage bias capabilities.
HP4274 LCR meter for capacitance measurements as a function of illumination intensity and temperature.
Accelerated stress exposure facility, allowing up to 16 samples to be independently monitored and maintained under different states of controlled atmosphere, illumination, electrical bias and temperature.
