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| Vol. 18, No. 12 | Nov. 19, 1998 |

I n October, a research team from the Department of Electrical and Computer Engineering won a performance award from the Defense Advanced Research Projects Agency (DARPA).
The award recognized Sustained Excellence by a Performer in Fiscal Year 1998 within DARPA's Ultra Electronics Program. It was presented by Gernot Pomrenke, manager of the Ultra Electronics Program, and by Alan C. Seabaugh of Raytheon Systems Co., head of the Quantum Metal Oxide Semiconductors research project, which includes the UD group.
The Delaware research team successfully developed new methods for making advanced electronic devices. Specifically, the group created tunnel diodes that operate on quantum, rather than classical, mechanical principles. Because electrons move more quickly in quantum devices, the new diodes show promise for improving the performance of the integrated circuits in computers.
The Delaware team included faculty members James Kolodzey (left) and Paul Berger (right); postdoctoral researcher Cyril Guedj; graduate students Sean Rommel and Michael W. Dashiell, and Thomas E. Dillon, an undergraduate researcher.